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BFP420H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5V
Current-Collector (Ic) (Max) 35mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 160mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 25GHz
Base Part Number BFP420
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Test Frequency 1.8GHz
Power Dissipation 210mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA 4V
Gain 21dB
Transition Frequency 25000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Max Junction Temperature (Tj) 150°C
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
Height 1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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