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BFP450H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 24GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP450
Element Configuration Single
Power Dissipation 500mW
Power - Max 450mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA 4V
Gain 15.5dB
Transition Frequency 42000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.25dB @ 1.8GHz
Height 800μm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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