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BFP460H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.8V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 22GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP460
Configuration SINGLE
Power Dissipation 200mW
Power - Max 230mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 70mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA 3V
Gain 12.5dB ~ 26.5dB
Transition Frequency 22000MHz
Max Breakdown Voltage 5.8V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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