BFP520FH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 3.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Max Power Dissipation 100mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 45GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP520
Pin Count 4
Configuration SINGLE
Power Dissipation 100mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 2V
Gain 22.5dB
Transition Frequency 45000MHz
Max Breakdown Voltage 3.5V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 1V
Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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