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BFP540H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
hFEMin 50
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Termination SMD/SMT
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 30GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP540
Configuration SINGLE
Test Frequency 1.8GHz
Power Dissipation 250mW
Case Connection EMITTER
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 3.5V
Gain 16dB
Voltage - Collector Emitter Breakdown (Max) 5V
Transition Frequency 30000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 14V
Emitter Base Voltage (VEBO) 1V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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