BFP620FH7764XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 2.8V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Max Power Dissipation 185mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP620
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 185mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA 1.5V
Gain 21dB ~ 10dB
Transition Frequency 65000MHz
Max Breakdown Voltage 2.8V
Frequency - Transition 65GHz
Collector Base Voltage (VCBO) 7.5V
Highest Frequency Band C B
Collector-Base Capacitance-Max 0.2pF
Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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