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BFP640ESDH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 46GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP640
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.1V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA 3V
Gain 7dB ~ 30dB
Transition Frequency 45000MHz
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 4.8V
Noise Figure (dB Typ @ f) 0.6dB ~ 2dB @ 150MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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