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BFP650FH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 42GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP650
Power Dissipation 500mW
Halogen Free Halogen Free
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Gain 11dB ~ 21.5dB
Max Breakdown Voltage 4.5V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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