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- BFP650H6327XTSA1
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BFP650H6327XTSA1 Tech Specifications
Category | Transistors - Bipolar (BJT) - RF | |
Manufacturer | Infineon | |
Factory Lead Time | 4 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SC-82A, SOT-343 | |
Number of Pins | 4Pins | |
Transistor Element Material | SILICON GERMANIUM CARBON | |
Collector-Emitter Breakdown Voltage | 4.5V | |
Number of Elements | 1 Element | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2005 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 4Terminations | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Max Power Dissipation | 500mW | |
Terminal Position | DUAL | |
Terminal Form | GULL WING |
Frequency | 41GHz | |
Base Part Number | BFP650 | |
Element Configuration | Single | |
Power Dissipation | 500mW | |
Transistor Application | AMPLIFIER | |
Halogen Free | Halogen Free | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 4V | |
Max Collector Current | 150mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA 3V | |
Gain | 10.5dB ~ 21.5dB | |
Transition Frequency | 42000MHz | |
Max Breakdown Voltage | 4.5V | |
Frequency - Transition | 37GHz | |
Collector Base Voltage (VCBO) | 13V | |
Emitter Base Voltage (VEBO) | 1.2V | |
Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz | |
Height | 900μm | |
Length | 2mm | |
Width | 1.25mm | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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BFP650H6327XTSA1 Documents
Download datasheets and manufacturer documentation for BFP650H6327XTSA1
- DatasheetsRF Discretes Selection Guide
- PCN PackagingRecyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
- Other Related DocumentsPart Number Guide
- Simulation ModelsInfineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model
- ConflictMineralStatementInfineon-company-51.pdf
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