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BFP740H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Max Power Dissipation 160mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 42GHz
Base Part Number BFP740
Configuration SINGLE
Power Dissipation 160mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA 3V
Gain 27dB
Transition Frequency 42000MHz
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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