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BFP760H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Collector-Emitter Breakdown Voltage 4V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 240mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP760
Power - Max 240mW
Halogen Free Halogen Free
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 70mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 35mA 3V
Gain 16.5dB ~ 29dB
Max Breakdown Voltage 4V
Frequency - Transition 45GHz
Collector Base Voltage (VCBO) 13V
Noise Figure (dB Typ @ f) 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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