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BFP840ESDH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Weight 6.406992mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 2.25V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 75mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 80GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP840
Element Configuration Single
Power Dissipation 75mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 1.8V
Gain 18.5dB
Transition Frequency 80MHz
Max Breakdown Voltage 2.25V
Collector Base Voltage (VCBO) 2.9V
Emitter Base Voltage (VEBO) 2.9V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 0.85dB @ 5.5GHz
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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