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BFP843H6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Collector-Emitter Breakdown Voltage 2.25V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 125mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP843
Power - Max 125mW
Halogen Free Halogen Free
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 55mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA 1.8V
Gain 13.5dB ~ 24.5dB
Max Breakdown Voltage 2.25V
Collector Base Voltage (VCBO) 2.9V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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