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BFQ19SH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Current-Collector (Ic) (Max) 120mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature LOW NOISE
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 75mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA 8V
Gain 7dB
Max Frequency 1.5GHz
Transition Frequency 5500MHz
Max Breakdown Voltage 15V
Frequency - Transition 5.5GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 3dB @ 1.8GHz
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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