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BFR106E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 99 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
hFEMin 70
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 15V
Max Power Dissipation 700mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 210mA
Frequency 5GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR106
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 700mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 16V
Max Collector Current 210mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA 8V
Gain 8.5dB ~ 13dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Max Junction Temperature (Tj) 150°C
Noise Figure (dB Typ @ f) 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Height 1.1mm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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