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BFR840L3RHESDE6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 2.6V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 75mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 75GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Element Configuration Single
Case Connection EMITTER
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 1.8V
Gain 27dB
Transition Frequency 75000MHz
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Emitter Base Voltage (VEBO) 2.9V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 0.5dB @ 450MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR840L3RHESDE6327XTSA1 Documents

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