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BFR843EL3E6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 2.6V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Power Dissipation 125mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE
Case Connection EMITTER
Power - Max 125mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 55mA
Gain 25.5dB
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Highest Frequency Band X B
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR843EL3E6327XTSA1 Documents

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