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BFR92PE6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 15V
hFEMin 40
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC 15V
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 45mA
Frequency 5GHz
Base Part Number BFR92
Configuration SINGLE
Test Frequency 900MHz
Power Dissipation 280mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 10.5dB ~ 16dB
Transition Frequency 5000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.6pF
Noise Figure (dB Typ @ f) 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Length 2.9mm
Height 1mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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