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BFR93AE6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 90mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 90mA
Frequency 6GHz
Base Part Number BFR93
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 90mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 9.5dB ~ 14.5dB
Transition Frequency 6000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.9pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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