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BFR93AWH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 6GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR93
Configuration SINGLE
Power Dissipation 300mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 90mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 10.5dB ~ 15.5dB
Transition Frequency 6000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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