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BFS17PE6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Collector-Emitter Saturation Voltage 400mV
Number of Elements 1 Element
hFEMin 20
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 15V
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 25mA
Frequency 2.5MHz
Base Part Number BFS17
Pin Count 3
Configuration SINGLE
Test Frequency 800MHz
Power Dissipation 280mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Transition Frequency 2500MHz
Max Breakdown Voltage 15V
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz
Height 1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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