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BSS84PH6327XTSA2 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 170mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Turn Off Delay Time 8.6 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 12Ohm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Position DUAL
Terminal Form GULL WING
Number of Channels 1Channel
Voltage 60V
Element Configuration Single
Current 17A
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 6.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 19pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 16.2ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 170mA
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Nominal Vgs -1.5 V
Height 900μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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