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FF100R12RT4HOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100A
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X5
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 555W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
Turn Off Time-Nom (toff) 490 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 630nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
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FF100R12RT4HOSA1 Documents

Download datasheets and manufacturer documentation for   FF100R12RT4HOSA1

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