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FF200R12KS4HOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 20 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.2V
Number of Elements 2 Elements
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Additional Feature FAST
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.4kW
Case Connection ISOLATED
Power - Max 1400W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
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FF200R12KS4HOSA1 Documents

Download datasheets and manufacturer documentation for   FF200R12KS4HOSA1

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