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FF225R12ME4BOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 16 Weeks
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 320A
Number of Elements 2 Elements
Published 2002
Series EconoDUAL™ 3
Operating Temperature -40°C~150°C
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 220 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn Off Time-Nom (toff) 600 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
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FF225R12ME4BOSA1 Documents

Download datasheets and manufacturer documentation for   FF225R12ME4BOSA1

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