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FF23MR12W1M1B11BOMA1 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Manufacturer Package Identifier AG-EASY1BM-2
Turn Off Delay Time 43.5 ns
Operating Temperature -40°C~150°C TJ
Packaging Tray
Series CoolSiC™+
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Number of Channels 2Channels
Power Dissipation 20mW
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 50A, 15V
Vgs(th) (Max) @ Id 5.55V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 125nC @ 15V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 50A
Max Junction Temperature (Tj) 150°C
FET Feature Silicon Carbide (SiC)
Height 12.35mm
RoHS Status ROHS3 Compliant
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FF23MR12W1M1B11BOMA1 Documents

Download datasheets and manufacturer documentation for   FF23MR12W1M1B11BOMA1

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