FF600R12IE4BOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 10Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 600A
Number of Elements 2 Elements
Operating Temperature -40°C~150°C TJ
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 3350W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Power Dissipation-Max (Abs) 3350W
Turn On Time 410 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 600A
Turn Off Time-Nom (toff) 1020 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 37nF @ 25V
VCEsat-Max 2.05 V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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FF600R12IE4BOSA1 Documents

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