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FF600R12ME4BOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 52 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11Pins
Transistor Element Material SILICON
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 4.05kW
Case Connection ISOLATED
Power - Max 4050W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 600A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 310 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn Off Time-Nom (toff) 770 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS Status RoHS Compliant
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FF600R12ME4BOSA1 Documents

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