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FF900R12IE4BOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 10 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.05V
Number of Elements 2 Elements
Operating Temperature -40°C~150°C TJ
Series PrimePack™2
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Max Power Dissipation 5.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Configuration Single
Element Configuration Dual
Power Dissipation 5.1kW
Case Connection ISOLATED
Power - Max 5100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 900A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 350 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn Off Time-Nom (toff) 940 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
Height 38mm
Length 172mm
Width 89mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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FF900R12IE4BOSA1 Documents

Download datasheets and manufacturer documentation for   FF900R12IE4BOSA1

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