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FP15R12W1T4B3BOMA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 20Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.85V
Number of Elements 6 Elements
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 20Terminations
ECCN Code EAR99
Additional Feature UL APPROVED
Max Power Dissipation 130W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 130W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 28A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 15A
Turn Off Time-Nom (toff) 495 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 890pF @ 25V
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Contains Lead
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FP15R12W1T4B3BOMA1 Documents

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