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FP30R06W1E3BOMA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 23Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.55V
Number of Elements 7 Elements
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23Terminations
ECCN Code EAR99
Max Power Dissipation 115W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 23
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 115W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 37A
Current - Collector Cutoff (Max) 1mA
Turn On Time 42 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 245 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
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FP30R06W1E3BOMA1 Documents

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