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FS50R12W2T4BOMA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 18Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.85V
Number of Elements 6 Elements
Operating Temperature -40°C~125°C
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15Terminations
ECCN Code EAR99
Max Power Dissipation 335W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 33
JESD-30 Code R-XUFM-X15
Qualification Status Not Qualified
Configuration Full Bridge Inverter
Power Dissipation 335W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 83A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 490 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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