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FZ800R12KE3HOSA1 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 4Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature -40°C~125°C TJ
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
Configuration Single
Case Connection ISOLATED
Power - Max 3550W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 800A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 440 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 800A
Turn Off Time-Nom (toff) 1000 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 56nF @ 25V
Height 36.5mm
Length 106.4mm
Width 61.4mm
RoHS Status ROHS3 Compliant
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FZ800R12KE3HOSA1 Documents

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