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IGLT65R035D2ATMA1 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Infineon
Package / Case PG-HDSOP-16
Mounting Styles SMD/SMT
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 650 V
Rds On - Drain-Source Resistance 42 mOhms
Vgs - Gate-Source Voltage - 10 V
Vgs th - Gate-Source Threshold Voltage 1.6 V
Qg - Gate Charge 11 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Type GaN Transistor
Configuration Single
Number of Channels 1 ChannelChannel
Output Power 152 W
Transistor Type 1 N-Channel
Product Power Transistors
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