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IGLT65R110D2ATMA1 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Infineon
Package / Case PG-HDSOP-16
Mounting Styles SMD/SMT
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 15 A
Rds On - Drain-Source Resistance 140 mOhms
Vgs - Gate-Source Voltage - 10 V
Vgs th - Gate-Source Threshold Voltage 1.6 V
Qg - Gate Charge 3.4 nC
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Type GaN Transistor
Configuration Single
Number of Channels 1 ChannelChannel
Transistor Type 1 N-Channel
Product Power Transistors
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