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IKW50N60H3FKSA1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 50A, 7 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 333W
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 130 ns
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 297 ns
IGBT Type Trench Field Stop
Gate Charge 315nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 23ns/235ns
Switching Energy 2.36mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IKW50N60H3FKSA1 Documents

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