IKW75N65ES5XKSA1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 75A, 18 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 395W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 395W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 85 ns
Turn On Time 94 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 75A
Turn Off Time-Nom (toff) 233 ns
IGBT Type Trench
Gate Charge 164nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 40ns/144ns
Switching Energy 2.4mJ (on), 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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