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IKY50N120CH3XKSA1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100A
Number of Elements 1 Element
Test Conditions 600V, 50A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 652W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 255ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 50A
Turn Off Time-Nom (toff) 462 ns
Gate Charge 235nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 32ns/296ns
Switching Energy 2.3mJ (on), 1.9mJ (off)
RoHS Status ROHS3 Compliant
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IKY50N120CH3XKSA1 Documents

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