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- IKZ75N65EL5XKSA1
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IKZ75N65EL5XKSA1 Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Infineon | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-247-4 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Number of Elements | 1 Element | |
| SwitchingFrequency | 50Hz | |
| Test Conditions | 400V, 75A, 23 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Series | TrenchStop™ 5 | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 536W | |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSFM-T4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 536W | |
| Transistor Application | POWER CONTROL | |
| Halogen Free | Halogen Free | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 100A | |
| Reverse Recovery Time | 59 ns | |
| Turn On Time | 133 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 75A | |
| Turn Off Time-Nom (toff) | 474 ns | |
| Gate Charge | 436nC | |
| Current - Collector Pulsed (Icm) | 300A | |
| Td (on/off) @ 25°C | 120ns/275ns | |
| Switching Energy | 1.57mJ (on), 3.2mJ (off) | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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IKZ75N65EL5XKSA1 Documents
Download datasheets and manufacturer documentation for IKZ75N65EL5XKSA1
- DatasheetsIKZ75N65EL5
- PCN Assembly/OriginMult Dev Wafer Chg 7/Aug/2019
- Other Related DocumentsPart Number Guide
- ConflictMineralStatementInfineon-company-51.pdf
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