IKZ75N65EL5XKSA1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-247-4
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
SwitchingFrequency 50Hz
Test Conditions 400V, 75A, 23 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series TrenchStop™ 5
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 536W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 536W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 100A
Reverse Recovery Time 59 ns
Turn On Time 133 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Turn Off Time-Nom (toff) 474 ns
Gate Charge 436nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 120ns/275ns
Switching Energy 1.57mJ (on), 3.2mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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