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IPB80N06S2L07ATMA3 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 210W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 3160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0097Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 450 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPB80N06S2L07ATMA3 Documents

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