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IPG20N06S4L26ATMA1 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 18 ns
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series OptiMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 33W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Power - Max 33W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 26m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 1.5ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.026Ohm
Avalanche Energy Rating (Eas) 35 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPG20N06S4L26ATMA1 Documents

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