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- IPG20N10S4L22ATMA1
IN STOCK
: 12000
Min. : 1
Mult. : 1

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IPG20N10S4L22ATMA1 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 30 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 60W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power Dissipation | 60W | |
| Turn On Delay Time | 5 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 25μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
| Rise Time | 3ns | |
| Fall Time (Typ) | 18 ns | |
| Continuous Drain Current (ID) | 20A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Max Dual Supply Voltage | 100V | |
| Drain to Source Breakdown Voltage | 100V | |
| Max Junction Temperature (Tj) | 175°C | |
| FET Feature | Logic Level Gate | |
| Height | 1mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
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IPG20N10S4L22ATMA1 Documents
Download datasheets and manufacturer documentation for IPG20N10S4L22ATMA1
- PCN PackagingMult Dev Pkg Box Chg 3/Jan/2018 Mult Dev Reel Design Chg 2/Dec/2019
- DatasheetsIPG20N10S4L-22 IPG20N10S4L22ATMA1-Infineon-datasheet-62294961.pdf
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLMult Dev Assembly Chg 4/Oct/2018
- ConflictMineralStatementInfineon-company-51.pdf
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