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IPP041N04NGXKSA1 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 94W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 94W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 45μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 3.8ns
Vgs (Max) ±20V
Fall Time (Typ) 4.8 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 60 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPP041N04NGXKSA1 Documents

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