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IPP65R074C6XKSA1 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 57.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 480.8W Tc
Turn Off Delay Time 56 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 74m Ω @ 13.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.4mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 7ns
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 57.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.074Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 151A
Avalanche Energy Rating (Eas) 915 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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