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IRF2804STRL7PP Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 160A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 330W Tc
Turn Off Delay Time 110 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 1.6MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 40V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 160A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 150ns
Vgs (Max) ±20V
Fall Time (Typ) 105 ns
Continuous Drain Current (ID) 320A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Recovery Time 65 ns
Nominal Vgs 4 V
Height 4.5466mm
Length 10.5mm
Width 8.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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