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IRF4905STRLPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier D2Pak
Current - Continuous Drain (Id) @ 25℃ 42A Tc
Turn Off Delay Time 51 ns
Power Dissipation (Max) 170W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Published 1997
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 20mOhm
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC -55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -74A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Continuous Drain Current (ID) -42A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 280A
Dual Supply Voltage -55V
Recovery Time 92 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Width 10.54mm
Length 10.54mm
Height 4.83mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Contains Lead
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