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IRF5210STRLPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 38A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta 170W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 60mOhm
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Voltage - Rated DC -100V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -40A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 63ns
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) -40A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage 100V
Recovery Time 260 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Height 4.83mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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