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IRF5305STRLPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 39 ns
Power Dissipation (Max) 3.8W Ta 110W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Published 2005
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 60mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -31A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Avalanche Energy Rating (Eas) 280 mJ
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Width 9.65mm
Length 10.668mm
Height 5.084mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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