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IRF5850TRPBF Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-TSOP | |
| Current - Continuous Drain (Id) @ 25℃ | 2.2A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 31 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 960mW | |
| Base Part Number | IRF5850PBF | |
| Element Configuration | Dual | |
| Power Dissipation | 960mW |
| Turn On Delay Time | 8.3 ns | |
| Power - Max | 960mW | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 28 ns | |
| Continuous Drain Current (ID) | -2.2A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -20V | |
| Input Capacitance | 320pF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 220mOhm | |
| Rds On Max | 135 mΩ | |
| Height | 1.143mm | |
| Length | 2.9972mm | |
| Width | 1.75mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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IRF5850TRPBF Documents
Download datasheets and manufacturer documentation for IRF5850TRPBF
- DatasheetsIRF5850PBF
- Other Related DocumentsIR Part Numbering System
- PCN Obsolescence/ EOLMultiple Devices 14/Dec/2012
- ConflictMineralStatementInfineon-company-51.pdf
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