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IRF7105TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.5A 2.3A
Number of Elements 2 Elements
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.5A
Base Part Number IRF7105PBF
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 13ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Nominal Vgs 3 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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